BSS138A n-channel enhancement mode field effect transistor features v ds drain-source voltage 50 v i d drain current-continuous 0.22 a v gs gate-source voltage v p d total power dissipation 0 . 3 5 w r ja thermal resistance junction to ambient 3 57 /w t j operating junction temperature -55 to +150 t stg storage temperature -55 to +150 internal block diagram revision: $ 201 /01/0 www. mccsemi .com 1 of 4 sot-23 suggested solder pad layout dimensions inches mm dim min max min max note a .110 .120 2.80 3.04 b .083 .098 2.10 2.64 c .047 .055 1.20 1.40 d .035 .041 .89 1.03 e .070 .081 1.78 2.05 f .018 .024 .45 .60 g .0005 .0039 .013 .100 h .035 .044 .89 1.12 j .003 .007 .085 .180 k .015 .020 .37 .51 a b c d e f g h j .079 2.000 in c h es mm . 03 1 .800 .035 .900 . 03 7 .950 .037 .950 k 2 3 1 1.gate 2. source 3. drain ? epoxy meets ul 94 v-0 flammability rating ? moisture sensitivity level 1 ? high dense cell design for extremely low r ds(on) ? esd protected:1500v maximum ratings @ 25 o c unless otherwise specified symbol parameter rating unit h alogen free available upon request by adding suffix "-hf" ? 0 l f u r & |